Huichan Seo

            Office : 40 Everitt Lab. West Green St. Urbana, IL 61801

            E-mail : hseo4@uiuc.edu

            Phone : 1-217-419-4343

 

   Who am I ?

     -  Birthday : November  23. 1976

     -  Birth Place : Busan, Korea

     -  Education

            Ph.D. : University of Illinois at U-C, Materials Science and Engineering, (2004 ~ present)
            M.  S.  : Seoul National University, Materials Science and Engineering, (2002 ~ 2004)
            B.  S.  : Seoul National University, Materials Science and Engineering,
(1995 ~ 2002)
                     (Army : 1998 ~ 2000)

     - Hobby

            Tennis, Golf, Inline Skate, Basketball, Computer Game

 

  Research

      - Growth and fabrication of GaN-based Power Device using Molecular Beam Epitaxy
      - Growth and chracterization of AlN using unbalanced magnetron sputtering
      - Fabrication of hybrid LC device on Si substrate

 

   Publications

1.   H. –C. Seo, S. Hong, P. Chapman, P. T. Krein, Kyekyoon Kim, ˇ°Improvement of Selective-Area Growth Using Plasma Assisted Molecular Beam Epitaxy for Low Ohmic Contact Resistanceˇ±, IEEE transactions on Nanotechnology (2006) (submitted).

2.     S. –Y. Kwon, H. J. Kim, H. Na, Y.-W. Kim, H. –C. Seo et al, ˇ° In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor depositionˇ±, J. Appl. Phys. 99 (2006) 044906

3.     J. -W. Yoon, S. S. Kim, H. Cheong, H. –C. Seo et al, ˇ° Electroreflectance and photoluminescence study of InNˇ±, Semicond. Sci. Technol. 20 (2005) 1068

4.     J. K. Jeong, J. –H. Choi, H. J. Kim, H. –C. Seo et al, ˇ° Buffer-layer-free growth of high quality epitaxial GaN films on 4H-SiC substrate by MOCVDˇ±, J. Crystal Growth 476 (2005) 407

5.     S. –Y. Kwon, H. J. Kim, H. Na, Y. –W. Kim, H. –C. Seo et al, ˇ° Growth of In-Rich InGaN/GaN Nanostructures by MOCVD and their Optical Propertiesˇ±, J. Korean Phys. Soc. 46 (2005) S130

6.     H. J. Kim, H. Na, S. –Y. Kwon, H. –C. Seo et al, ˇ° Growth of In-rich InGaN/GaN quantum dots by MOCVDˇ±, J. Crystal Growth 269 (2005) 95

7.     S. –Y. Kwon, M. –H. Cho, P. Moon, H. J. Kim, H. Na, H. –C. Seo et al, ˇ° Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional gradingˇ±, phys. Stat. sol. (a) 201 (2004) 2818

8.     J. K. Jeong, H. K. Song, M. Y. Um, H. J. Kim, H. –C. Seo et al, ˇ° Growth of GaN films on porous 4H-SiC substrate by MOCVDˇ±, Materials science forum 457 (2004) 1597

9.   J. K. Jeong, H. J. Kim, H. –C. Seo et al, ˇ° Improvement in the crystalline quality of epitaxial GaN films grown by MOCVD by adopting porous 4H-SiC substrateˇ±, electrochemical and solid-state letters, 7(4) (2004) C43

10.   S. –Y. Kwon, H. J. Kim, H. Na, H. –C. Seo et al, ˇ° Effect of growth interruption on In-rich InGaN/GaN single quantum well structureˇ±, phys. Stat. sol. © 0 (2003) 2830

11.   H. J. Kim, H. Na, S. –Y. Kwon, H. –C. Seo et al, ˇ° The growth of In-rich InGaN/GaN single quantum well by MOCVDˇ±, phys. Stat. sol. © 0 (2003) 2834

 

   Conferences

1.    H.  –C. Seo et al, ˇ°Non-Alloyed Ohmic Contact Using Selective-Area Growth by Plasma-Assisted Molecular Beam Epitaxyˇ±, 2007 Electronic Materials Conference, June, 2007, IN, USA

2.     H.  –C. Seo et al, ˇ°Optimization of Selective-Area Growth Using Plasma Assisted Molecular Beam Epitaxy for fablication of Low Ohmic Contacts to n-GaNˇ±, International Workshop on Nitride Semiconductors 2006, October, 2006, Kyoto, Japan.

3.    S. Hong, H.  –C. Seo et al, ˇ°The effect of Selective-Area Growth Using Plasma Assisted Molecular Beam Epitaxy on DC performance of AlGaN/GaN HEMTˇ±, International Workshop on Nitride Semiconductors 2006, October, 2006, Kyoto, Japan.

4.    H.  –C. Seo et al, ˇ°Improvement of Selective-Area Growth Using Plasma Assisted Molecular Beam Epitaxy for Low Ohmic Contact Resistanceˇ±, IEEE Nanotechnology Materials and Devices conference 2006, October, 2006, Gyeongju, Korea.

5.     J. -W. Yoon, S. S. Kim, H. Cheong, H. –C. Seo et al, ˇ° Electroreflectance and photoluminescence study of InNˇ±, The 6th International Conference on Nitride Semiconductors (ICNS-6), Aug. 28 - Sep. 02, 2005, Bremen, Germany.

6.     H. J. Kim, H. J. Kim, H. Na, Y. Shin, S. –Y. Kwon, H. -C.Seo et al, "Growth and optical properties of In-rich InGaN quantum dots on GaN and AIGaN", European Materials Research Society 2004 SPRING MEETING, 2004. 05. 24, Strasbourg, France

7.    H. J. Kim, S. –Y. Kwon, H. Na, H. –C. Seo et al, "In-rich InGaN/GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition", The 6th International Symposium of Northeastern Asian NanoScience and Technology , 2004. 03. 15, Shanghai, P. R. China

8.     H. J. Kim, H. Na, S. –Y. Kwon, H. –C. Seo et al, "In-rich InGaN/GaN Self-Assembled Quantum Dots by MOCVD", RCIQE , 2004. 02. 09, Hokkaido University, Japan

9.     H. –C. Seo et al, ˇ° Effect of low temperature InN buffer layer on InN grown by MOCVDˇ±, The 5d International  Symposium on Blue Laser and Light Emitting Diodes (ISBLLEDˇŻ04), 2004, Hotel Hyundai, Gyeongju, Korea.

10.   S. –Y. Kwon, M. –H. Cho, H. J. Kim, H. Na, H. –C. Seo et al, ˇ°Determination of indium composition in In-rich InGaN/GaN single quantum well structureˇ±, The 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004), 2004

11.  H. –C. Seo et al, ˇ°Epitaxial growth of InN on GaN by metalorganic chemical vapor depositionˇ±, 2003 International  Symposium on Compound Semiconductors (ISCS2003), August 25-27, San Diego, USA.

12.  H. –C. Seo et al, ˇ°Growth of InN layer using low temperature intermediate layerˇ±, The 3rd International Conference on Advanced Materials and Devices (ICAMDˇŻ03), December 10-12, 2003, Ramada Plaza, Jeju, Korea.

13. H. J. Kim, H. Na, S. –Y. Kwon, H. –C. Seo et al, ˇ°The growth of InN/GaN single quantum well by metalorganic chemical vapor depositionˇ±, The 5th International Conference on Nitride Semiconductors (ICNS-5), May 25-30, 2003, Nara, Japan.

14.  S. –Y. Kwon, H. J. Kim, H. Na, H. –C. Seo et al, ˇ°Effect of growth interruption on InN/GaN single quantum well structuresˇ±, The 5th International Conference on Nitride Semiconductors (ICNS-5), May 25-30, 2003, Nara, Japan.

15.  H. J. Kim, H. Na, Y. Shin, S. –Y. Kwon, , H. –C. Seo et al, ˇ°Emission wavelength tuning of In-rich InGaN quantum dot structures grown by metalorganic chemical vapor depositionˇ±, International WomenˇŻs Conference on BIEN-Technology (BIEN 2003), November 13-16, 2003, Paichai Univ., Daejeon, Korea.

16.  Y. Shin, H, J. Kim, H. Na, S.-Y. Kwon, D.-H. Kim, H. –C. Seo et al, ˇ°The epitaxial growth and characterization of In-rich InGaN by metalorganic chemical vapor depositionˇ±, International WomenˇŻs Conference on BIEN-Technology, 2003

17.  S. –Y. Kwon, H. J. Kim, H. Na, D.-H. Kim, H. –C. Seo et al, ˇ°Growth of InN layer using high temperature grown buffer layerˇ±, The 3rd International Conference on Advanced Materials and Devices(ICAMDˇŻ03), December 10-12, 2003, Ramada Plaza, Jeju, Korea.

18.  S. –Y. Kwon, H. J. Kim, H. Na, H. –C. Seo et al, ˇ°Effect of growth interruption on InN/GaN single quantum well structuresˇ±, The 10th Korea-China Symposium on thin Film Materials, 2003

 

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University of Illinois at Urbana-Champaign